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項目 |
[2]. Jyi-Tsong Lin, Kuo-Dong Huang, Chu-Lun Wu, “An Alleviated Self-heating Poly-Si Thin-Film Transistor Built on Non-continuing Buried Insulator”, Electrochemical and Solid State Letters, Vol. 10, No. 3, January 2007, PP. H107-H110. (SCI Impact Factor: 2.009=1621/807) |
[3]. Jyi-Tsong Lin, Kuo-Dong Huang and Shih-Tsong Lin, “A Kink-Free Bottom Gate Poly-Si Thin-Film Transistor with Smart Body Tie”, Electrochemical and Solid-State Transactions, vol. 2, No. 26, 2007, pp. 1-7. |
[4]. Jyi-Tsong Lin, Kuo-Dong Huang, and Shu-Fen Hu, “The Effect of N-Channel Polysilicon Thin-Film Transistors with Body-Block Spacers”, Solid-State Electronics, Vol. 51, 29 June 2007, PP. 1056-1061. (SCI Impact Factor: 1.159=723/624) |
[5]. Jyi-Tsong Lin, and Yi-Chuen Eng, “Source/Drain-Tied Poly-Si Thin-Film Transistor with Π-Shaped Active Region for Device Reliability Improvement,” Journal of Applied Physics, Vol. 101, 16 May 2007, PP. 104501-104505. (SCI Impact Factor: 2.316=14216/6137). |
[6]. Jyi-Tsong Lin and Yi-Chuen Eng, “Influence of Block Oxide Width on a Silicon on Partial Insulator Field-Effect Transistor,” IEEE Transactions on Electron Devices, Vol. 54, No. 11, November 2007, PP. (SCI Impact Factor: 2.105=1480/703) |
[7]. Yi-Chuen Eng and Jyi-Tsong Lin, “A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT Devices,” IEEE Transactions on Electron Devices, Vol. 54, No. 12, December 2007, PP. (SCI Impact Factor: 2.105=1480/703) |
[8]. Jyi-Tsong Lin, and Kuo-Dong Huang, “A Non-Classical Polysilicon Thin-Film Transistor with Symmetric Trenched Body,” Electronics Letters, (SCI Impact Factor: 1.063=2088/1964) |
[9]. Jyi-Tsong Lin, Kuo-Dong Huang, and Shih-Tsong Lin, “The Effect of a Smart Body Tie on the Bottom Gate Thin Film Transistor”, Solid-State Electronics, 2007, PP. (SCI Impact Factor: 1.159=723/624) |
II. 國際會議論文45篇: |
III. 國內會議論文40篇: |
IV. 專利Patents ( 6件,19件PENDING)。 |
V. 其他 |
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